Technical Specifications

  • Microwave power source

    6 kW at 2.45 GHz

  • Reaction gases:

    Up to 5:
    H2 – 1000 sccm
    O2 – 50 sccm
    CH4 – 200 sccm
    N2 – 1000 sccm
    Ar – 1000 sccm

  • Gas process pressure

    20-500 Torr

  • Substrate diameter

    up to 100  (4″) mm

  • Substrate temperature

    up to 1200 °C

  • Growth rate

    up to 100 mkm/h /h (for single crystal diamonds)
    up to 6 mkm/h /h (for polycrystalline diamonds)

  • Visual control

    5 diagnostic 70 mm CF quartz windows

  • Chamber and the substrate holder

    water-cooled vacuum stainless steel chamber, a substrate holder made of molybdenum

  • Additional options

    Z-shift, two-beam pyrometer, DC Bias

  • Management

    Windows operating system, the synthesis process is controlled by the program Control Ardis

  • Dimension

    Length – 1660 mm
    Width – 880 mm
    Height -1840 mm